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600V Gate Drivers for MOSFETs and IGBTs in Motors and PSUs

May 19, 2017

Diodes Incorporated has introduced the DGD2103M, DGD2104M and DGD2304. These gate drivers feature a floating high-side driver to simplify the switching of two N-channel MOSFETs or two IGBTs in a half-bridge configuration. These drivers suit a wide range of motor control and power supply applications in industrial automation and white goods that require ac and dc motor control boards rated above 100W, and LLC resonant converter power supply topologies.

The half-bridge configuration of the DGD2103M, DGD2104M and DGD2304 devices includes high-side (HS) and low-side (LS) drivers with high pulse-current outputs to provide effective switching of low RDS(on) MOSFETs or IGBTs, and increase overall system efficiencies. Shoot-through prevention logic includes closely matched delay times and a fixed internal deadtime to protect the HS and LS power switches by ensuring they are not on simultaneously. The floating high-side driver provides high-voltage isolation allowing operation on power rails up to 600V.

Compatible with logic-level inputs from 2.5V, these gate drivers further simplify the driving of power switches by enabling direct pwm control from 3.3V MCUs, while the gate drive output operates up to the Vcc supply (10V to 20V) to minimize conduction losses in the switch. The DGD2103M and DGD2104M have optimized Schmitt trigger inputs to avoid false triggering in noisy motor applications; while the DGD2304 provides a shorter internal deadtime, typically 100ns, making it a better choice for high-frequency applications.

Additional self-protection features include a gate drive that is tolerant to negative transients arising from high dV/dt switching, and undervoltage lockout (UVLO) to avoid malfunction under low supply voltage conditions. All three gate drivers are offered in an industry standard SO-8 package, providing pin-for-pin compatibility with competitive parts but with superior faster switching performance.

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