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FETs Optimized for Compact & Efficient Wireless Charging

April 3, 2017

The OptiMOS™ half-bridge symmetrical BSZ0909ND from Infineon Technologies is an optimized solution for wireless power, drives, and wearables. It has optimized figure-of-merit for gate charge times RDS(on) (QG*RDS(on)) to achieve 6.78MHz switching frequency, what makes it a leading product in the industry when it comes to fast switching. The BSZ0909ND is a good fit for architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.

Infineon’s OptiMOS technology combined with the PQFN PowerStage 3x3 (WISON-8) package offers an optimized solution for dc-dc applications with space critical requirements. The BSZ0909ND is designed for use in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.

Specifications include: VDS maximum of 30.0V; RDS(on) maximum of 18.0mΩ; RDS(on) (at 4.5V) maximum is 25.0mΩ; ID maximum is 20.0A; Ptot maximum is 17.0W; IDpuls maximum is 40.0A; VGS(th) ranges from 1.2V to 2.0V; Qg is 1.8nC ; the operating temperature range is -55 to +150 degrees C; Qgd is 0.5nC

Summary of features: Ultra-low Q g; Symmetric half bridge in a small 3.0x3.0mm² package outline; Exposed pads; Logic level (4.5V rated); and RoHS compliant 6/6 (full lead free). This half-bridge symmetrical provides: Low switching losses; High switching frequency operation; Lowest parasitics; Low operating temperature; Low gate drive losses; and RoHS 6/6 lead free product.

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