October 25, 2016
Microsemi Corporation today announced its aerospace power core module (PCM) with an integrated field programmable gate array (FPGA) and hybrid power drive (HPD) stage. The PCM controls the electrical motors used in applications such as primary flight control actuation, landing gear systems and other systems. The device interfaces seamlessly with both aircraft power supplies and flight controllers, providing vital sensor feedback for health monitoring.
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October 25, 2016
The IEEE's annual International Electron Devices Meeting (IEDM) is the world's largest and most influential forum for technologists to unveil breakthroughs in transistors and related micro/nanoelectronics devices. The 62nd annual meeting, to be held at the Hilton San Francisco Union Square Hotel from December 3 - 7, 2016, will include a session (Session #20) on System-Level Impact of Power Devices that will consider the impact of wide-bandgap (WBG) GaN and SiC power devices on system designs.
October 10, 2016
Senior Product Manager, Silicon Labs
Electromagnetic relays (EMRs) are broadly used in motor control, automotive, HVAC, valve control, solar inverter and many other industrial applications. Over the last 10 years, solid-state relays (SSRs) have seen fast growth as they begin to replace EMRs. Designers have found that SSRs can address most of the limitations of EMRs. But as is often the case with alternative solutions, SSRs have their own set of tradeoffs that can challenge designers. A third alternative exists: using custom SSRs. Let's exam the limitations and tradeoffs of each approach.
December 31, 2015
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE plc has created gallium-nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches — with applications spanning nearly all electronics products and electricity distribution infrastructures. Along with having many desirable features as a material, GaN is notorious for its defects and reliability issues. So the team zeroed in on devices based on GaN with record-low defect concentrations to probe GaN's ultimate performance limits for power electronics. They describe their results in a paper in the journal Applied Physics Letters.