August 26, 2016
Bellnix has added the 150A BDP series non-isolated point of load (POL) step-down dc-dc converters. These dc-dc converters include digital control (PMBus) to change settings such as output voltage, turn-on sequence and turn-off sequence via serial communication during operation. Furthermore, the product is equipped with digital loop control that enables high output voltage accuracy.
August 26, 2016
The U.S. Federal Trade Commission (FTC) has issued a ruling that requires ON Semiconductor to divest Its ignition IGBT business as a condition of acquiring Fairchild Semiconductor. According to a written statement from the FTC, "the divestiture to Littelfuse, Inc. will preserve competition in market for insulated-gate bipolar transistors used in automotive ignition systems. ON Semiconductor Corporation has agreed to sell its Ignition IGBT business in order to settle FTC charges that its proposed $2.4 billion acquisition of Fairchild Semiconductor International, Inc. is anticompetitive."
July 11, 2016
Power Systems Architect and MCM Design Expert, Exar Corporation
Today's systems place complicated demands on their multiple low-voltage DC rails; a sophisticated power controller can manage the diverse needs with efficiency and flexibility.
December 31, 2015
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE plc has created gallium-nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches — with applications spanning nearly all electronics products and electricity distribution infrastructures. Along with having many desirable features as a material, GaN is notorious for its defects and reliability issues. So the team zeroed in on devices based on GaN with record-low defect concentrations to probe GaN's ultimate performance limits for power electronics. They describe their results in a paper in the journal Applied Physics Letters.